JPS6364060B2 - - Google Patents

Info

Publication number
JPS6364060B2
JPS6364060B2 JP55074296A JP7429680A JPS6364060B2 JP S6364060 B2 JPS6364060 B2 JP S6364060B2 JP 55074296 A JP55074296 A JP 55074296A JP 7429680 A JP7429680 A JP 7429680A JP S6364060 B2 JPS6364060 B2 JP S6364060B2
Authority
JP
Japan
Prior art keywords
layer
type emitter
type
width
emitter layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55074296A
Other languages
English (en)
Japanese (ja)
Other versions
JPS571257A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP7429680A priority Critical patent/JPS571257A/ja
Publication of JPS571257A publication Critical patent/JPS571257A/ja
Publication of JPS6364060B2 publication Critical patent/JPS6364060B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices

Landscapes

  • Thyristors (AREA)
JP7429680A 1980-06-04 1980-06-04 Semiconductor device Granted JPS571257A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7429680A JPS571257A (en) 1980-06-04 1980-06-04 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7429680A JPS571257A (en) 1980-06-04 1980-06-04 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS571257A JPS571257A (en) 1982-01-06
JPS6364060B2 true JPS6364060B2 (en]) 1988-12-09

Family

ID=13543026

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7429680A Granted JPS571257A (en) 1980-06-04 1980-06-04 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS571257A (en])

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6022369A (ja) * 1983-07-18 1985-02-04 Mitsubishi Electric Corp 自己消弧形制御整流半導体装置
JPS62147770A (ja) * 1985-12-20 1987-07-01 Fuji Electric Co Ltd Ｇｔｏサイリスタ
US4918509A (en) * 1986-04-12 1990-04-17 Licentia Patent-Verwaltungs-Gmbh Gate turn-off thyristor
DE68923056T2 (de) * 1988-10-04 1995-11-30 Toshiba Kawasaki Kk Halbleiteranordnung mit kurzgeschlossener Anode und Verfahren zu deren Herstellung.
US5248622A (en) * 1988-10-04 1993-09-28 Kabushiki Kashiba Toshiba Finely controlled semiconductor device and method of manufacturing the same
DE59309406D1 (de) * 1992-10-15 1999-04-08 Siemens Ag Abschaltbarer Thyristor

Also Published As

Publication number Publication date
JPS571257A (en) 1982-01-06

Similar Documents

Publication Publication Date Title
US8716826B2 (en) Semiconductor device
US5372954A (en) Method of fabricating an insulated gate bipolar transistor
US4450467A (en) Gate turn-off thyristor with selective anode penetrating shorts
JP3417013B2 (ja) 絶縁ゲート型バイポーラトランジスタ
EP0014098A2 (en) Gate turn-off thyristor
JPH05226638A (ja) 半導体装置
JPS6043668B2 (ja) 半導体装置
US3476992A (en) Geometry of shorted-cathode-emitter for low and high power thyristor
US3234441A (en) Junction transistor
JPS6353702B2 (en])
JPS6364060B2 (en])
JPS5933272B2 (ja) 半導体装置
JP3807023B2 (ja) 電力用ダイオード
JPH0465552B2 (en])
US4646122A (en) Semiconductor device with floating remote gate turn-off means
US7838970B2 (en) Semiconductor component with high concentration doped zone embedded in emitter region
CN116825836A (zh) 一种门极换流晶闸管
JPH0677472A (ja) サージ防護素子
JPS6364907B2 (en])
US3688164A (en) Multi-layer-type switch device
JPS6153877B2 (en])
JP2557818B2 (ja) 逆導通ゲ−トタ−ンオフサイリスタ装置
JP2802459B2 (ja) フォト・トライアック
US4586070A (en) Thyristor with abrupt anode emitter junction
JP2682015B2 (ja) ゲートターンオフサイリスタ